Samsung’s Galaxy Note 7 has certainly caught everyone’s attention less than one month before its unveiling. The smartphone has been subjected to multiple benchmark tests, which have revealed its specs but have also shown that multiple variants of the handset will be released. The latest regards the Galaxy Note 7 Verizon variant, which has been spotted on Geekbench.
Samsung’s Galaxy Note 7 has recently visited Geekbench and received a single-core score of 2200 and a multi-core score of 4469. The Verizon-bound version bears the code name SM-N930V, and it’s designed exclusively for the largest carrier in the United States. The smartphone was been spotted ona few days ago, and the specs indicated at that point seem to be roughly the same as those for the model on .
The benchmark test reveals some details on the Galaxy Note 7 model, and considering that this unit is still under testing, some changes could be made before its official release. The handset seems to come with a Qualcomm Snapdragon 820 processor, but previous rumors suggested that it would sport a Snapdragon 821 processor or Samsung’s Exynos 8893 processor, in certain countries.
Galaxy Note 7 Verizon variant might come with 4GB of RAM
The model subjected to the benchmark test comes with 4GB of RAM, which is quite surprising. That’s because the Galaxy Note 7 is expected to provide 6GB of RAM, which is actually one of the main selling points of the device.
Samsung’s Galaxy Note 7 is also projected to feature an iris scanner and USB Type-C port. Other specs are a screen size between 5.7 inches and 6 inches, with 1440 x 2560 pixel resolution, and 128GB and 256GB of internal memory.
It should also pack a 4,000mAh battery, although some hearsay implied that the battery capacity could reach 3,600mAh. Galaxy Note 7 should also run Android Marshmallow 6.0.1 and receive updates to Android Nougat 7.0 soon after its debut.
The smartphone will also come with a new version of TouchWiz, GraceUX, and a redesigned. As the August 2 release date approaches, we expect more information on the device to surface.
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